The Mbit memory is sampling now, with production for all densities starting in April Previously you would have needed a Xeon for such a quantity of RAM. For devices not capable of synchronous burst mode, the new chip also features an eight-word page mode that reads data more than twice as fast as traditional asynchronous flash memory products. When was the last time you upgraded your PC? Introduced by Intel inIntel StrataFlash memory offers a cost-effective, single-chip solution for code execution and data storage, and is the most widely used and proven MLC product on the market. Synchronous Intel StrataFlash can be used in conjunction with Intel flash memory software to improve both the performance and time to market of a device. Synchronous Intel StrataFlash memory uses three volts for the core device, and is available in either 3- or 1.

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Published on Apr 19, Abstract The L18 flash memory device provides read-while-write and read-while-erase capability with density upgrades through Mbit. This family of devices provides high performance at low voltage on a bit data bus. Individually erasable memory blocks are sized for optimum code and data storage.

Each device density contains one parameter partition and several main partitions. The flash memory array is grouped into multiple 8-Mbit partitions. By dividing the flash memory into partitions, program or erase operations can take place at the same time as read operations.

Although each partition has write, erase and burst read capabilities, simultaneous operation is limited to write or erase in one partition while other partitions are in read mode. The L18 flash memory device allows burst reads that cross partition boundaries.

Upon initial power up or return from reset, the device defaults to asynchronous page-mode read. Configuring the Read Configuration Register enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with a user-supplied clock signal. In addition to the enhanced architecture and interface, the L18 flash memory device incorporates technology that enables fast factory program and erase operations.

Designed for low-voltage systems, the L18 flash memory device supports read operations with VCC at 1. Within a single computer there are more than one type of memory. The primary difference between them is the lifetime of the data they store. SRAM retains its contents as long as electrical power is applied to the chip. If the power is turned off or lost temporarily, its contents will be lost forever. DRAM, on the other hand, has an extremely short data lifetime-typically about four milliseconds.

This is true even when power is applied constantly. Compared to that, DRAM seems useless. By refreshing the data before it expires, the contents of memory can be kept alive for as long as they are needed. When deciding which type of RAM to use, a system designer must consider access time and cost.

Generally, SRAM is used only where access speed is extremely important. Many embedded systems include both types: a small block of SRAM a few kilobytes along a critical data path and a much larger block of dynamic random access memory perhaps even in Megabytes for everything else.

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